电流 - 集电极截止(最大值):
不同 Ib,Ic 时的 Vce 饱和值(最大值):
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值):
电阻器 - 发射极基底(R2):
图片 型号 品牌 描述 PDF 价格 起订量 库存 操作
RN1112ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1112ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1112ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1111ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1111ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1111ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1109ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1109ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1109ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1108ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1108ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1108ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1106ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1106ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1106ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1105ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1105ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1105ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1104ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
RN1104ACT(TPL3) Toshiba Semiconductor and Storage
TRANS PREBIAS NP...
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1 580 提交询价
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