供应商器件封装:
电压 - 集射极击穿(最大值):
功率 - 最大值:
不同 Ib,Ic 时的 Vce 饱和值(最大值):
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值):
图片 型号 品牌 描述 PDF 价格 起订量 库存 操作
2SA1020-Y,T6WNLF(J Toshiba Semiconductor and Storage
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2SA1020-Y,T6NSF(J Toshiba Semiconductor and Storage
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2SA1020-Y,F(M Toshiba Semiconductor and Storage
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2SB1457,T6YMEF(M Toshiba Semiconductor and Storage
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2SB1457,T6TOTOF(J Toshiba Semiconductor and Storage
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2SB1457(TE6,F,M) Toshiba Semiconductor and Storage
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2SB1457(T6DW,F,M) Toshiba Semiconductor and Storage
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2SB1457(T6CNO,A,F) Toshiba Semiconductor and Storage
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2SB1457(T6CANO,F,M Toshiba Semiconductor and Storage
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2SA1930,Q(J Toshiba Semiconductor and Storage
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2SA1930,ONKQ(J Toshiba Semiconductor and Storage
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2SA1930,LBS2DIAQ(J Toshiba Semiconductor and Storage
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2SA1930,CKQ(J Toshiba Semiconductor and Storage
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2SA1930(ONK,Q,M) Toshiba Semiconductor and Storage
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2SA1930(LBS2MATQ,M Toshiba Semiconductor and Storage
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2SA1930(Q,M) Toshiba Semiconductor and Storage
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2SA1680,T6SCMDF(J Toshiba Semiconductor and Storage
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2SA1680,T6F(J Toshiba Semiconductor and Storage
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2SA1680,T6ASTIF(J Toshiba Semiconductor and Storage
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2SA1680,F(J Toshiba Semiconductor and Storage
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