- 封装/外壳:
-
- 功率耗散(最大值):
-
- 电流 - 连续漏极(Id)(25°C 时):
-
- 不同 Id,Vgs 时的 Rds On(最大值):
-
- 不同 Id 时的 Vgs(th)(最大值):
-
- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时的输入电容(Ciss)(最大值):
-
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
![]() |
Infineon Technologies | MOSFET N-CH 4VSON |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 18A... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 600V 4V... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | COOLMOS P7 800V SOT... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CHANNEL... |
-
|
1 | 26 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET TO263-3 |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 600V 6A... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 4VSON |
-
|
1 | 2,943 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 950V 9A... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CHANNEL... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 600V 12A... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 800V 1.5... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 4VSON |
-
|
1 | 1 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 950V 14A... |
-
|
1 | 515 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 950V 6A... |
-
|
1 | 2,418 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 800V 7A... |
-
|
1 | 2,315 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 800V 6A... |
-
|
1 | 1,413 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 6A... |
-
|
1 | 2,480 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 800V 4.5... |
-
|
1 | 2,480 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 600V 9A... |
-
|
1 | 2,490 | 提交询价 |