- 封装/外壳:
-
- 功率耗散(最大值):
-
- 电流 - 连续漏极(Id)(25°C 时):
-
- 不同 Id,Vgs 时的 Rds On(最大值):
-
- 不同 Id 时的 Vgs(th)(最大值):
-
- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
-
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
![]() |
Infineon Technologies | MOSFET N-CH TO263-3 |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 11A... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 46A... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH TO263-3 |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 19A... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 15A... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 46A... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 11A... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH TO263-3 |
-
|
1 | 884 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 35A... |
-
|
1 | 749 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 69A... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 50A... |
-
|
1 | 580 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 13A... |
-
|
1 | 1,000 | 提交询价 | ||
![]() |
Infineon Technologies | HIGH POWER_NEW |
-
|
1 | 1,620 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH TO263-3 |
-
|
1 | 109 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 22A... |
-
|
1 | 890 | 提交询价 | ||
![]() |
Infineon Technologies | HIGH POWER_NEW |
-
|
1 | 1,904 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 13A... |
-
|
1 | 2,475 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 11A... |
-
|
1 | 1,880 | 提交询价 | ||
![]() |
Infineon Technologies | MOSFET N-CH TO263-3 |
-
|
1 | 1,250 | 提交询价 |