- 品牌:
-
- Diodes Incorporated (46)
- Infineon Technologies (153)
- Nexperia USA Inc. (65)
- NXP USA Inc. (4)
- ON Semiconductor (126)
- Rohm Semiconductor (25)
- Sanken (9)
- STMicroelectronics (51)
- Texas Instruments (20)
- Vishay Siliconix (113)
- 系列:
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- 工作温度:
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- 封装/外壳:
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- 供应商器件封装:
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- 功率耗散(最大值):
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- 电流 - 连续漏极(Id)(25°C 时):
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- 驱动电压(最大 Rds On,最小 Rds On):
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- 不同 Id,Vgs 时的 Rds On(最大值):
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- 不同 Id 时的 Vgs(th)(最大值):
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- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时的输入电容(Ciss)(最大值):
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图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
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Infineon Technologies | MOSFET N-CH 100V 15A |
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|
1 | 580 | 提交询价 | ||
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Infineon Technologies | MOSFET N-CH 100V 18A |
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|
1 | 580 | 提交询价 | ||
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Infineon Technologies | MOSFET N-CH 100V 15A |
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|
1 | 580 | 提交询价 | ||
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Infineon Technologies | MOSFET N CH 100V 11A... |
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|
1 | 580 | 提交询价 | ||
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Diodes Incorporated | MOSFET N-CH 100V 2.4... |
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|
1 | 580 | 提交询价 | ||
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Infineon Technologies | MOSFET N-CH 100V 170... |
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|
1 | 580 | 提交询价 | ||
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Infineon Technologies | MOSFET N-CH 100V 59A... |
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|
1 | 580 | 提交询价 | ||
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Infineon Technologies | MOSFET N-CH 100V 11A |
-
|
1 | 580 | 提交询价 | ||
![]() |
ON Semiconductor | MOSFET N-CH 100V 23A... |
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|
1 | 580 | 提交询价 | ||
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ON Semiconductor | MOSFET N-CH 100V 58A... |
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|
1 | 580 | 提交询价 | ||
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ON Semiconductor | MOSFET N-CH 100V 72A... |
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|
1 | 580 | 提交询价 | ||
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Diodes Incorporated | MOSFET N-CH 100V 2.9... |
-
|
1 | 580 | 提交询价 | ||
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NXP USA Inc. | MOSFET N-CH 100V SC... |
-
|
1 | 580 | 提交询价 | ||
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NXP USA Inc. | MOSFET N-CH 100V 1.8... |
-
|
1 | 580 | 提交询价 | ||
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Taiwan Semiconductor Corporation | MOSFET N-CH 100V 58A... |
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|
1 | 580 | 提交询价 | ||
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 10.... |
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|
1 | 580 | 提交询价 | ||
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Renesas Electronics America | MOSFET N-CH 100V 23A... |
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|
1 | 580 | 提交询价 | ||
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Renesas Electronics America | MOSFET N-CH 100V 25A... |
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|
1 | 580 | 提交询价 | ||
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Vishay Siliconix | MOSFET N-CH 100V 3.1... |
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|
1 | 580 | 提交询价 | ||
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Renesas Electronics America | MOSFET N-CH 100V 15A... |
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|
1 | 580 | 提交询价 |