- 品牌:
-
- ON Semiconductor (1)
- 系列:
-
- 供应商器件封装:
-
- 功率耗散(最大值):
-
- 电流 - 连续漏极(Id)(25°C 时):
-
- 不同 Id,Vgs 时的 Rds On(最大值):
-
- 不同 Id 时的 Vgs(th)(最大值):
-
- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
-
22 条记录
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET N-CH 650V 10.... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 6A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 7.3... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 8.7... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 10.... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 13.... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 20.... |
-
|
1 | 580 | 提交询价 | |||
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 10.... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 16.... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 6.2... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 0.8... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 7.3... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 650V 7A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 9A... |
-
|
1 | 580 | 提交询价 | |||
STMicroelectronics | MOSFET N-CH 650V 15.... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 4.5... |
-
|
1 | 11 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 4.5... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 3.2... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 3.2... |
-
|
1 | 580 | 提交询价 |