- 系列:
-
- 零件状态:
-
- 功率耗散(最大值):
-
- 电流 - 连续漏极(Id)(25°C 时):
-
- 不同 Id,Vgs 时的 Rds On(最大值):
-
- 不同 Id 时的 Vgs(th)(最大值):
-
- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时的输入电容(Ciss)(最大值):
-
24 条记录
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET N-CH 650V 10.... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 10.... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 16.... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 6.2... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 0.8... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 7.3... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 7.3... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 9A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 4.5... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 3.2... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 3.9... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 8.7... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 2.8... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 7.3... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 18A... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V TO... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 6A... |
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|
1 | 2,480 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 13A... |
-
|
1 | 2,475 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 11A... |
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|
1 | 1,880 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 51A... |
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|
1 | 2,490 | 提交询价 |