- 品牌:
-
- ON Semiconductor (2)
- 功率耗散(最大值):
-
- 电流 - 连续漏极(Id)(25°C 时):
-
- 不同 Id,Vgs 时的 Rds On(最大值):
-
- 不同 Id 时的 Vgs(th)(最大值):
-
- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时的输入电容(Ciss)(最大值):
-
20 条记录
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET N-CH TO263-3 |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 6A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 7.3... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 8.7... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 10.... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 13.... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 20.... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 11A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 46A... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 650V 7A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 11.... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 31.... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 38A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 17.... |
-
|
1 | 975 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 22.... |
-
|
1 | 1,990 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH TO263-3 |
-
|
1 | 1,696 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 650V 44A... |
-
|
1 | 1,509 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH TO263-3 |
-
|
1 | 1,985 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH TO263-3 |
-
|
1 | 1,761 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH TO263-3 |
-
|
1 | 1,701 | 提交询价 |