- 品牌:
-
- Diodes Incorporated (25)
- Infineon Technologies (412)
- Microchip Technology (12)
- NXP USA Inc. (4)
- ON Semiconductor (197)
- Vishay Siliconix (11)
- 系列:
-
- 封装/外壳:
-
- 供应商器件封装:
-
- 漏源电压(Vdss):
-
- 电流 - 连续漏极(Id)(25°C 时):
-
- 驱动电压(最大 Rds On,最小 Rds On):
-
- 不同 Id,Vgs 时的 Rds On(最大值):
-
- 不同 Id 时的 Vgs(th)(最大值):
-
- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
-
- Vgs(最大值):
-
- 不同 Vds 时的输入电容(Ciss)(最大值):
-
- FET 功能:
-
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
Diodes Incorporated | MOSFET N-CH 30V 7.1A... |
-
|
1 | 1,194 | 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 30V 7.1A... |
|
1 | 1,194 | 加入购物车 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 30V 7.1A... |
-
|
1 | 580 | 提交询价 | |||
Alpha & Omega Semiconductor Inc. | MOSFET N-CH |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 60V 7A ... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 30V 13.6... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 30V 13.6... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 30V 13.6... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 30V 8.3A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 30V 8.3A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 30V 8.3A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 150V 5.1... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 150V 5.1... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 150V 5.1... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 200V 3.7... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 200V 3.7... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 200V 3.7... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 40V 14A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 40V 14A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 40V 14A... |
-
|
1 | 580 | 提交询价 |